Invention Grant
- Patent Title: Magnetoresistive random access memory
- Patent Title (中): 磁阻随机存取存储器
-
Application No.: US13356920Application Date: 2012-01-24
-
Publication No.: US08570792B2Publication Date: 2013-10-29
- Inventor: Tien-Wei Chiang , Kai-Chun Lin , Ya-Chen Kao , Hung-Chang Yu
- Applicant: Tien-Wei Chiang , Kai-Chun Lin , Ya-Chen Kao , Hung-Chang Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14
Abstract:
A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed above or below the MTJ. The induction line is configured to induce a magnetic field at the MTJ.
Public/Granted literature
- US20130188418A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY Public/Granted day:2013-07-25
Information query
