发明授权
US08573151B2 Microwave plasma processing apparatus, dielectric window for use in the microwave plasma processing apparatus, and method for manufacturing the dielectric window
失效
微波等离子体处理装置，用于微波等离子体处理装置的电介质窗，以及制造电介质窗的方法
- 专利标题： Microwave plasma processing apparatus, dielectric window for use in the microwave plasma processing apparatus, and method for manufacturing the dielectric window
- 专利标题（中）： 微波等离子体处理装置，用于微波等离子体处理装置的电介质窗，以及制造电介质窗的方法
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申请号： US12393724申请日： 2009-02-26
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公开(公告)号： US08573151B2公开(公告)日： 2013-11-05
- 发明人: Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto , Yasuyuki Shirai , Masafumi Kitano , Kohei Watanuki , Takaaki Matsuoka , Shigemi Murakawa
- 申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto , Yasuyuki Shirai , Masafumi Kitano , Kohei Watanuki , Takaaki Matsuoka , Shigemi Murakawa
- 申请人地址： JP JP
- 专利权人： Tokyo Electron Limited,Tohoku University
- 当前专利权人： Tokyo Electron Limited,Tohoku University
- 当前专利权人地址： JP JP
- 代理机构： Cantor Colburn LLP
- 优先权： JP2008-048063 20080228
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23F1/00 ; H01L21/306 ; B05D5/06 ; B05D3/02
摘要：
A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.
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