Invention Grant
- Patent Title: Semiconductor devices having electrodes
- Patent Title (中): 具有电极的半导体器件
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Application No.: US13303255Application Date: 2011-11-23
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Publication No.: US08575760B2Publication Date: 2013-11-05
- Inventor: Jae-hyun Phee , Uihyouong Lee , Ju-il Choi , Jung-Hwan Kim
- Applicant: Jae-hyun Phee , Uihyouong Lee , Ju-il Choi , Jung-Hwan Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2010-0118960 20101126
- Main IPC: H01L23/498
- IPC: H01L23/498
Abstract:
A semiconductor device includes a substrate having a first surface and an opposite second surface. An electrode extends within the substrate towards the first surface and has a protruding portion extending from the first surface. A supporting portion extends from the first surface of the substrate to a sidewall of the protruding portion and supports the protruding portion.
Public/Granted literature
- US20120133041A1 Semiconductor Devices Having Electrodes and Methods of Fabricating the Same Public/Granted day:2012-05-31
Information query
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