Invention Grant
- Patent Title: Flash memory system capable of operating in a random access mode
- Patent Title (中): 闪存系统能够以随机存取模式运行
-
Application No.: US13570960Application Date: 2012-08-09
-
Publication No.: US08576626B2Publication Date: 2013-11-05
- Inventor: Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
- Applicant: Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0014966 20070213
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A memory system includes a memory and a memory controller operating to control the memory. The memory includes a random accessible memory including a memory cell array operable in a random access mode, a NAND flash memory, and a selection circuit making the memory controller operate either one of the random accessible memory or the NAND flash memory.
Public/Granted literature
- US20120300548A1 MEMORY SYSTEM AND DATA READING METHOD THEREOF Public/Granted day:2012-11-29
Information query