Invention Grant
- Patent Title: Formation of shallow junctions by diffusion from a dielectronic doped by cluster or molecular ion beams
- Patent Title (中): 通过由簇或分子离子束掺杂的电介质扩散形成浅结
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Application No.: US13217577Application Date: 2011-08-25
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Publication No.: US08580663B2Publication Date: 2013-11-12
- Inventor: Amitabh Jain
- Applicant: Amitabh Jain
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/426
- IPC: H01L21/426
Abstract:
A process for forming diffused region less than 20 nanometers deep with an average doping dose above 1014 cm−2 in an IC substrate, particularly LDD region in an MOS transistor, is disclosed. Dopants are implanted into a source dielectric layer using gas cluster ion beam (GCIB) implantation, molecular ion implantation or atomic ion implantation resulting in negligible damage in the IC substrate. A spike anneal or a laser anneal diffuses the implanted dopants into the IC substrate. The inventive process may also be applied to forming source and drain (S/D) regions. One source dielectric layer may be used for forming both NLDD and PLDD regions.
Public/Granted literature
- US20110312168A1 FORMATION OF SHALLOW JUNCTIONS BY DIFFUSION FROM A DIELECTRIC DOPED BY CLUSTER OR MOLECULAR ION BEAMS Public/Granted day:2011-12-22
Information query
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