Invention Grant
- Patent Title: Memory cells
- Patent Title (中): 记忆单元
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Application No.: US13355382Application Date: 2012-01-20
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Publication No.: US08581224B2Publication Date: 2013-11-12
- Inventor: Gurtej S. Sandhu , Bhaskar Srinivasan
- Applicant: Gurtej S. Sandhu , Bhaskar Srinivasan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another.
Public/Granted literature
- US20130187117A1 Memory Cells and Methods of Forming Memory Cells Public/Granted day:2013-07-25
Information query
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