Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12922316Application Date: 2009-03-27
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Publication No.: US08581333B2Publication Date: 2013-11-12
- Inventor: Kiyoshi Takeuchi
- Applicant: Kiyoshi Takeuchi
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-107011 20080416
- International Application: PCT/JP2009/056331 WO 20090327
- International Announcement: WO2009/128337 WO 20091022
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A first local wiring includes a convex portion protruding from a base and a protrusion protruding from a side surface of the convex portion. The convex portion of the first local wiring is connected to a lower conductive region of a first transistor while the protrusion is connected to a gate electrode of a second transistor. Moreover, the lower surface of the protrusion of the first local wiring is arranged at a height equal to or lower than the upper surface of the gate electrode of the second transistor.
Public/Granted literature
- US20110018056A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-01-27
Information query
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