发明授权
US08581334B2 Via structures and semiconductor devices having the via structures
有权
具有通孔结构的通孔结构和半导体器件
- 专利标题: Via structures and semiconductor devices having the via structures
- 专利标题(中): 具有通孔结构的通孔结构和半导体器件
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申请号: US12910019申请日: 2010-10-22
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公开(公告)号: US08581334B2公开(公告)日: 2013-11-12
- 发明人: Dong-Chan Lim , Gil-Heyun Choi , Byung-Lyul Park , Sang-Hoon Ahn , Jong-Myeong Lee
- 申请人: Dong-Chan Lim , Gil-Heyun Choi , Byung-Lyul Park , Sang-Hoon Ahn , Jong-Myeong Lee
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2009-0107570 20091109
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/02
摘要:
A via structure may include a first conductive pattern, a buffer pattern, and a second conductive pattern. The first conductive pattern may be on an inner wall of a first substrate and the inner wall may define a via hole passing at least partially through the first substrate. The buffer pattern may be on the first conductive pattern and the buffer pattern may partially fill the via hole. The second conductive pattern may be on a top surface of the buffer pattern in the via hole.
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