发明授权
US08582351B2 Methods and systems for adjusting wordline up-level voltage to improve production yield relative to SRAM-cell stability
有权
用于调整字线上电压的方法和系统，以提高相对于SRAM单元稳定性的产量
- 专利标题： Methods and systems for adjusting wordline up-level voltage to improve production yield relative to SRAM-cell stability
- 专利标题（中）： 用于调整字线上电压的方法和系统，以提高相对于SRAM单元稳定性的产量
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申请号： US12892191申请日： 2010-09-28
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公开(公告)号： US08582351B2公开(公告)日： 2013-11-12
- 发明人: Igor Arsovski , George M. Braceras , Kevin W. Gorman , Robert M. Houle , Harold Pilo
- 申请人： Igor Arsovski , George M. Braceras , Kevin W. Gorman , Robert M. Houle , Harold Pilo
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Downs Rachlin Martin PLLC
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Methods of setting wordline up-level voltage in as-fabricated SRAM. In one example, the method includes determining the relative speed, or strength, of 1) the combination of the pass-gate and pull-down devices and 2) the pull-up devices in the bitcells of the SRAM. These relative strengths are then used to adjust the wordline up-level voltage, if needed, to decrease the likelihood of the SRAM experiencing a stability failure. Corresponding systems are provided for determining the relative strengths of the devices of interest, for determining the amount of up-level voltage adjustment needed, and for selecting and setting the up-level voltage.
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