Invention Grant
- Patent Title: High voltage resistor
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Application No.: US12905840Application Date: 2010-10-15
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Publication No.: US08587073B2Publication Date: 2013-11-19
- Inventor: Chih-Chang Cheng , Ruey-Hsin Liu , Chih-Wen (Albert) Yao , Ru-Yi Su , Fu-Chih Yang , Chun Lin Tsai
- Applicant: Chih-Chang Cheng , Ruey-Hsin Liu , Chih-Wen (Albert) Yao , Ru-Yi Su , Fu-Chih Yang , Chun Lin Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/62
- IPC: H01L23/62

Abstract:
Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of the resistor. The voltage protection device includes a second doped region that is electrically coupled to the second portion of the resistor. The first and second doped regions have opposite doping polarities.
Public/Granted literature
- US20120091529A1 HIGH VOLTAGE RESISTOR Public/Granted day:2012-04-19
Information query
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