发明授权
- 专利标题： Semiconductor device with trench isolation having a diffusion preventing film and manufacturing method thereof
- 专利标题（中）： 具有沟槽隔离的半导体器件具有防扩散膜及其制造方法
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申请号： US13286699申请日： 2011-11-01
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公开(公告)号： US08587085B2公开(公告)日： 2013-11-19
- 发明人: Katsuyuki Horita
- 申请人： Katsuyuki Horita
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2010-256693 20101117
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/70
摘要：
There is provided a technology capable of providing desirable operation characteristics in a field effect transistor formed in an active region surrounded by a trench type element isolation part. An element isolation part includes trench type element isolation films, diffusion preventive films each including a silicon film or a silicon oxide film, and having a thickness of 10 to 20 nm formed over the top surfaces of the trench type element isolation films, and silicon oxide films each with a thickness of 0.5 to 2 nm formed over the top surfaces of the diffusion preventive films. The composition of the diffusion preventive film is SiOx (0≦x
公开/授权文献
- US20120119309A1 SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF 公开/授权日：2012-05-17
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