Invention Grant
- Patent Title: Photomask constructions having liners of specified compositions along sidewalls of multi-layered structures
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Application No.: US13750963Application Date: 2013-01-25
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Publication No.: US08589826B2Publication Date: 2013-11-19
- Inventor: William Stanton , Fei Wang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.
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