发明授权
US08590485B2 Small form factor plasma source for high density wide ribbon ion beam generation
有权
用于高密度宽带离子束产生的小尺寸等离子体源
- 专利标题: Small form factor plasma source for high density wide ribbon ion beam generation
- 专利标题(中): 用于高密度宽带离子束产生的小尺寸等离子体源
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申请号: US12767125申请日: 2010-04-26
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公开(公告)号: US08590485B2公开(公告)日: 2013-11-26
- 发明人: Costel Biloiu , Jay Scheuer , Joseph Olson , Frank Sinclair , Daniel Distaso
- 申请人: Costel Biloiu , Jay Scheuer , Joseph Olson , Frank Sinclair , Daniel Distaso
- 申请人地址: US MA Gloucestor
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucestor
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23F1/00 ; H01L21/306 ; H05B31/26
摘要:
An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
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