Invention Grant
- Patent Title: Fabrication method and fabrication apparatus for fabricating metal oxide thin film
- Patent Title (中): 制造金属氧化物薄膜的制造方法和制造装置
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Application No.: US12600665Application Date: 2008-05-16
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Publication No.: US08591991B2Publication Date: 2013-11-26
- Inventor: Kanji Yasui , Hiroshi Nishiyama , Masatoshi Tsukichi , Yasunobu Inoue , Masasuke Takata
- Applicant: Kanji Yasui , Hiroshi Nishiyama , Masatoshi Tsukichi , Yasunobu Inoue , Masasuke Takata
- Applicant Address: JP Niigata JP Tokyo
- Assignee: National University Corporation Nagaoka University of Technology,Tokyo Electron Limited
- Current Assignee: National University Corporation Nagaoka University of Technology,Tokyo Electron Limited
- Current Assignee Address: JP Niigata JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2007-135817 20070522
- International Application: PCT/JP2008/059087 WO 20080516
- International Announcement: WO2008/143197 WO 20081127
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A fabrication method for fabricating a metal oxide film introduces H2 gas and O2 gas or, H2O2 gas, into a catalytic reactor to make contact with a catalyst to generate H2O gas. The H2O gas that is generated is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit the metal oxide thin film on a substrate and fabricate the metal oxide thin film.
Public/Granted literature
- US20100166958A1 FABRICATION METHOD AND FABRICATION APPARATUS FOR FABRICATING METAL OXIDE THIN FILM Public/Granted day:2010-07-01
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