Invention Grant
US08592918B2 Forming inter-device STI regions and intra-device STI regions using different dielectric materials
有权
使用不同的介电材料形成器件间STI区和器件内部区域
- Patent Title: Forming inter-device STI regions and intra-device STI regions using different dielectric materials
- Patent Title (中): 使用不同的介电材料形成器件间STI区和器件内部区域
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Application No.: US12843658Application Date: 2010-07-26
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Publication No.: US08592918B2Publication Date: 2013-11-26
- Inventor: Feng Yuan , Tsung-Lin Lee , Hung-Ming Chen , Chang-Yun Chang
- Applicant: Feng Yuan , Tsung-Lin Lee , Hung-Ming Chen , Chang-Yun Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first k value. A semiconductor strip is between and adjoining the two insulation regions, with a top portion of the semiconductor strip forming a semiconductor fin over top surfaces of the two insulation regions. An additional insulation region is in the second device region and over the substrate. The additional insulation region includes a second dielectric material having a second k value greater than the first k value.
Public/Granted literature
- US20110095372A1 Forming Inter-Device STI Regions and Intra-Device STI Regions Using Different Dielectric Materials Public/Granted day:2011-04-28
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