发明授权
- 专利标题: Semiconductor integrated circuit device and method of manufacturing the same
- 专利标题(中): 半导体集成电路器件及其制造方法
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申请号: US13160497申请日: 2011-06-14
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公开(公告)号: US08592984B2公开(公告)日: 2013-11-26
- 发明人: Hiromi Shigihara , Akira Yajima , Hisao Shigihara , Hiroshi Tsukamoto
- 申请人: Hiromi Shigihara , Akira Yajima , Hisao Shigihara , Hiroshi Tsukamoto
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2010-136029 20100615
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. On the surface of a rewiring including a two-layer film in which a first Ni film is laminated on the top of a Cu film, a pad to which a wire is coupled is formed. The pad includes a two-layer film in which an Au film is laminated on the top of a second Ni film and formed integrally so as to cover the top surface and the side surface of the rewiring. Due to this, the area of contact between the rewiring and the pad increases, and therefore, the pad becomes difficult to be peeled off from the rewiring.
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