公开(公告)号：US08592984B2

公开(公告)日：2013-11-26

申请号：US13160497

申请日：2011-06-14

申请人： Hiromi Shigihara ,  Akira Yajima ,  Hisao Shigihara ,  Hiroshi Tsukamoto

发明人： Hiromi Shigihara ,  Akira Yajima ,  Hisao Shigihara ,  Hiroshi Tsukamoto

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/02331 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48844 ,  H01L2224/49175 ,  H01L2224/85207 ,  H01L2224/85399 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0496 ,  H01L2924/10162 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2224/45015 ,  H01L2924/207

摘要： To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. On the surface of a rewiring including a two-layer film in which a first Ni film is laminated on the top of a Cu film, a pad to which a wire is coupled is formed. The pad includes a two-layer film in which an Au film is laminated on the top of a second Ni film and formed integrally so as to cover the top surface and the side surface of the rewiring. Due to this, the area of contact between the rewiring and the pad increases, and therefore, the pad becomes difficult to be peeled off from the rewiring.

摘要翻译： 为了抑制以Cu为主要成分的重新布线所提供的用于外部耦合的Au焊盘的剥离。 在包括在Cu膜的顶部上层叠有第一Ni膜的双层膜的再布线表面上形成连接有导线的焊盘。 焊盘包括双层膜，其中Au膜层叠在第二Ni膜的顶部上并且整体形成以覆盖重新布线的顶表面和侧表面。 由此，重新布线和焊盘之间的接触面积增加，因此，焊盘难以从重新布线剥离。

公开(公告)号：US08435868B2

公开(公告)日：2013-05-07

申请号：US12650537

申请日：2009-12-30

申请人： Hisao Shigihara ,  Hiromi Shigihara ,  Akira Yajima

发明人： Hisao Shigihara ,  Hiromi Shigihara ,  Akira Yajima

IPC分类号： H01L21/302

CPC分类号： H01L24/11 ,  H01L21/6836 ,  H01L23/544 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/02166 ,  H01L2224/0231 ,  H01L2224/0347 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/05083 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48847 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： With a general wafer level package process, in order to prevent corrosion of an aluminum type pad electrode in a scribe region in a plating process, the pad electrode is covered with a pad protective resin film at the same layer as an organic type protective film in a product region. However, this makes it impossible to perform the probe test on the pad electrode in the scribe region after rewiring formation. The present invention provides a method for manufacturing a semiconductor integrated circuit device of a wafer level package system. The organic type protective films in the chip regions and the scribe region are mutually combined to form an integral film pattern. In a pelletization step, the surface layer portion including the organic type protective film at the central part of the scribe region is first removed by laser grooving, to form a large-width groove. Then, a dicing processing of the central part in this groove results in separation into the chip regions.

摘要翻译： 通过一般的晶片级封装工艺，为了防止电镀工艺中的划线区域中的铝型焊盘电极的腐蚀，焊盘电极被覆盖有与有机型保护膜同层的焊盘保护树脂膜 产品区域。 然而，这使得不可能在重新布线形成之后对划线区域中的焊盘电极执行探针测试。 本发明提供一种制造晶片级封装系统的半导体集成电路器件的方法。 芯片区域和划线区域中的有机型保护膜相互组合形成整体膜图案。 在造粒步骤中，首先通过激光切槽除去包括划线区域中央部分的有机型保护膜的表层部，形成大宽度槽。 然后，该凹槽中的中心部分的切割处理导致分离成芯片区域。

公开(公告)号：US20100181650A1

公开(公告)日：2010-07-22

申请号：US12650537

申请日：2009-12-30

申请人： Hisao SHIGIHARA ,  Hiromi Shigihara ,  Akira Yajima

发明人： Hisao SHIGIHARA ,  Hiromi Shigihara ,  Akira Yajima

IPC分类号： H01L23/544 ,  H01L21/302

CPC分类号： H01L24/11 ,  H01L21/6836 ,  H01L23/544 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/02166 ,  H01L2224/0231 ,  H01L2224/0347 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/05083 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48847 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： With a general wafer level package process, in order to prevent corrosion of an aluminum type pad electrode in a scribe region in a plating process, the pad electrode is covered with a pad protective resin film at the same layer as an organic type protective film in a product region. However, this makes it impossible to perform the probe test on the pad electrode in the scribe region after rewiring formation. The present invention provides a method for manufacturing a semiconductor integrated circuit device of a wafer level package system. The organic type protective films in the chip regions and the scribe region are mutually combined to form an integral film pattern. In a pelletization step, the surface layer portion including the organic type protective film at the central part of the scribe region is first removed by laser grooving, to form a large-width groove. Then, a dicing processing of the central part in this groove results in separation into the chip regions.

摘要翻译： 通过一般的晶片级封装工艺，为了防止电镀工艺中的划线区域中的铝型焊盘电极的腐蚀，焊盘电极被覆盖有与有机型保护膜同层的焊盘保护树脂膜 产品区域。 然而，这使得不可能在重新布线形成之后对划线区域中的焊盘电极执行探针测试。 本发明提供一种制造晶片级封装系统的半导体集成电路器件的方法。 芯片区域和划线区域中的有机型保护膜相互组合形成整体膜图案。 在造粒步骤中，首先通过激光切槽除去包括划线区域中央部分的有机型保护膜的表层部，形成大宽度槽。 然后，该凹槽中的中心部分的切割处理导致分离成芯片区域。

公开(公告)号：US20120235278A1

公开(公告)日：2012-09-20

申请号：US13406356

申请日：2012-02-27

申请人： Hisao Shigihara ,  Hiromi Shigihara ,  Akira Yajima

发明人： Hisao Shigihara ,  Hiromi Shigihara ,  Akira Yajima

IPC分类号： H01L29/92 ,  H01L21/56 ,  H01L23/498

CPC分类号： H01L24/03 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49503 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0236 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/03906 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/0556 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05566 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/10126 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Adhesive strength between a rewiring and a solder bump is improved in a semiconductor integrated circuit device in which a bump electrode is connected to a land section of the rewiring. The land section 20A of the rewiring 20 is formed by a five-layer metal film (a barrier metal film 13, a seed film 14, a Cu film 15, a first Ni film 16, and a second Ni film 17) constituting the rewiring 20, the uppermost-layer second Ni film 17 has a larger area than that of the other metal films (the barrier metal film 13, the seed film 14, the Cu film 15, and the first Ni film 16). A solder bump 21 is connected to the surface of the second Ni film 17. At the end portion of the solder bump 21, a polyimide resin film 22 is formed directly under the second Ni film 17.

摘要翻译： 在其中凸起电极连接到重新布线的接地部分的半导体集成电路器件中，重新布线和焊料凸块之间的粘合强度得到改善。 再配线20的陆部20A由构成重新布线的五层金属膜（阻挡金属膜13，种子膜14，Cu膜15，第一Ni膜16，第二Ni膜17）形成 如图20所示，最上层的第二Ni膜17的面积比其他金属膜（阻挡金属膜13，种子膜14，Cu膜15，第一Ni膜16）的面积大。 焊料凸块21连接到第二Ni膜17的表面。在焊料凸块21的端部处，在第二Ni膜17的正下方形成聚酰亚胺树脂膜22。

公开(公告)号：US20060131365A1

公开(公告)日：2006-06-22

申请号：US11300308

申请日：2005-12-15

申请人： Hiromi Shigihara ,  Hisao Shigihara ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hisao Shigihara ,  Akira Yajima

IPC分类号： B23K31/02 ,  B23K31/00

CPC分类号： H01L24/11 ,  B23K3/0623 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05083 ,  H01L2224/05624 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/1148 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014

摘要： Realization of the projection electrode formation with a narrow pad pitch is planned. In preparing a semiconductor wafer, by forming a polyimide film, which does not cover each of a plurality of lands, between the respective lands which adjoin each other among the plurality of lands on the main surface of the semiconductor wafer, applying a soldering paste material with the printing method via the mask for printing on each of a plurality of lands after polyimide film formation, and forming a solder bump by performing heat curing of the soldering paste material after removing the mask for printing, a solder bump can be formed without generating a electric short circuit between bumps even in the case of a narrow pad pitch.

摘要翻译： 计划实现具有窄垫间距的投影电极形成。 在制备半导体晶片时，通过在半导体晶片的主表面上的多个焊盘之间形成不覆盖多个焊盘中的每一个的聚酰亚胺膜之间的多个焊盘之间彼此相邻的焊盘之间， 通过印刷方法通过掩模在聚酰亚胺膜形成之后的多个区域中的每一个上进行印刷，并且通过在除去用于印刷的掩模之后进行焊膏材料的热固化来形成焊料凸块，可以形成焊料凸块而不产生 即使在窄焊盘间距的情况下，也可以在凸点之间产生电气短路。

公开(公告)号：US09466559B2

公开(公告)日：2016-10-11

申请号：US13229887

申请日：2011-09-12

申请人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L23/485 ,  H01L21/66

CPC分类号： H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

摘要： In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

摘要翻译： 在用于车辆用途的半导体集成电路器件中，半导体芯片上的铝焊盘和外部器件通过使用金线的引线接合彼此耦合以便于安装。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 半导体集成电路器件可以包括作为器件的一部分的半导体芯片，经由阻挡金属膜设置在半导体芯片上的铝基焊盘上的电解镀金表面膜（金基金属镀膜），以及 用于在电镀表面膜和设置在布线板（布线基板）上的外部引线之间互连的金接合线（金基接合线）。

公开(公告)号：US08063489B2

公开(公告)日：2011-11-22

申请号：US12628869

申请日：2009-12-01

申请人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

摘要： In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).

摘要翻译： 在用于车辆用途的半导体集成电路装置等中，为了便于安装，通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件（半导体器件或电子电路器件），其包括作为器件的一部分的半导体芯片，设置在铝上的电解镀金表面膜（金基金属镀膜） 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线（金基接合线）。

公开(公告)号：US20100133688A1

公开(公告)日：2010-06-03

申请号：US12628869

申请日：2009-12-01

申请人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC分类号： H01L23/488

CPC分类号： H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

摘要： In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).

摘要翻译： 在用于车辆用途的半导体集成电路装置等中，为了便于安装，通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件（半导体器件或电子电路器件），其包括作为器件的一部分的半导体芯片，设置在铝上的电解镀金表面膜（金基金属镀膜） 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线（金基接合线）。