Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13186049Application Date: 2011-07-19
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Publication No.: US08592988B2Publication Date: 2013-11-26
- Inventor: Ho-Jin Lee , Sung-Dong Cho , Se-Young Jeong , Yeong-Lyeol Park , Sin-Woo Kang
- Applicant: Ho-Jin Lee , Sung-Dong Cho , Se-Young Jeong , Yeong-Lyeol Park , Sin-Woo Kang
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0087233 20100907
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device may include a substrate and a through electrode. The substrate may have a first surface and a second surface opposite to the first surface, the substrate including circuit patterns formed on the first surface. The through electrode penetrates the substrate and may be electrically connected to the circuit pattern, the through electrode including a first plug that extends from the first surface in a thickness direction of the substrate and a second plug that extends from the second surface in the thickness direction of the substrate so as to be connected to the first plug.
Public/Granted literature
- US20120056330A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-03-08
Information query
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