发明授权
- 专利标题： Isotopically-enriched boron-containing compounds, and methods of making and using same
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申请号： US13300575申请日： 2011-11-19
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公开(公告)号： US08598022B2公开(公告)日： 2013-12-03
- 发明人: Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
- 申请人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Hultquist, PLLC
- 代理商 Steven J. Hultquist; Rosa Yaghmour
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
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