摘要:
An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
摘要:
An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.
摘要:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要:
An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.
摘要:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要:
Apparatus and methods for cleaning ion implanters and/or components thereof are described, utilizing cleaning agents reacted with residue deposits to effect removal thereof. An endpoint detection apparatus and method are also disclosed, which may be integrated in the cleaning apparatus and methods to provide highly efficient utilization of the cleaning agent and avoidance of deleterious effects that otherwise can occur when cleaning agents are continued to be exposed to an implanter or components thereof after cleaning has been completed.
摘要:
A fluid containment system including a vessel for containing a fluid that is discharged from the vessel in use or operation of the system. A pressure monitoring assembly including a strain-responsive sensor is disposed on an exterior wall surface of the vessel, to sense dynamic strain on the wall surface of such vessel that is incident to discharge of fluid from the vessel, and to responsively output a pressure-indicative response. Such arrangement is particularly useful in application to fluid storage and dispensing vessels containing interiorly disposed pressure regulator assemblies and holding liquefied gases or compressed gases, e.g., for use in semiconductor manufacturing operations.
摘要:
An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.