发明授权
- 专利标题: Heat dissipation structure of SOI field effect transistor
- 专利标题(中): SOI场效应晶体管的散热结构
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申请号: US13582624申请日: 2011-08-17
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公开(公告)号: US08598636B2公开(公告)日: 2013-12-03
- 发明人: Ru Huang , Xin Huang , Shoubin Xue , Yujie Ai
- 申请人: Ru Huang , Xin Huang , Shoubin Xue , Yujie Ai
- 申请人地址: CN Beijing
- 专利权人: Peking University
- 当前专利权人: Peking University
- 当前专利权人地址: CN Beijing
- 代理机构: Bozicevic, Field & Francis LLP
- 代理商 Bret E. Field
- 优先权: CN201010259659 20100823
- 国际申请: PCT/CN2011/078507 WO 20110817
- 国际公布: WO2012/025025 WO 20120301
- 主分类号: H01L29/80
- IPC分类号: H01L29/80
摘要:
The present invention discloses a heat dissipation structure for a SOI field effect transistor having a schottky source/drain, which relates to a field of microelectronics. The heat dissipation structure includes two holes connected with a drain terminal or with both a source terminal and a drain terminal, which are filled with an N-type material with high thermoelectric coefficient and a P-type material with high thermoelectric coefficient respectively. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a high potential with respect to the drain terminal, and a metal wire for the P-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a low potential with respect to the drain terminal. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the source terminal is applied a high potential with respect to the source terminal, and a metal wire for the P-type material in the vicinity of the source terminal is applied a lower potential with respect to the source terminal. By way of a Peltier effect, in the present invention heat can be absorbed at a contact portion between the thermoelectric material and the source/drain, and at the same time dissipated at a connection portion between the thermoelectric material and a bottom electrode metal, so that the heat generated in an active region of the device is effectively transferred to the substrate and dissipated through a heat sink.