公开(公告)号：US20130001655A1

公开(公告)日：2013-01-03

申请号：US13582624

申请日：2011-08-17

Applicant: Ru Huang ,  Xin Huang ,  Shoubin Xue ,  Yujie Ai

Inventor： Ru Huang ,  Xin Huang ,  Shoubin Xue ,  Yujie Ai

IPC: H01L23/38 ,  H01L29/80

CPC classification number: H01L23/38 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention discloses a heat dissipation structure for a SOI field effect transistor having a schottky source/drain, which relates to a field of microelectronics. The heat dissipation structure includes two holes connected with a drain terminal or with both a source terminal and a drain terminal, which are filled with an N-type material with high thermoelectric coefficient and a P-type material with high thermoelectric coefficient respectively. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a high potential with respect to the drain terminal, and a metal wire for the P-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a low potential with respect to the drain terminal. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the source terminal is applied a high potential with respect to the source terminal, and a metal wire for the P-type material in the vicinity of the source terminal is applied a lower potential with respect to the source terminal. By way of a Peltier effect, in the present invention heat can be absorbed at a contact portion between the thermoelectric material and the source/drain, and at the same time dissipated at a connection portion between the thermoelectric material and a bottom electrode metal, so that the heat generated in an active region of the device is effectively transferred to the substrate and dissipated through a heat sink.

Abstract translation: 本发明公开了一种具有肖特基源极/漏极的SOI场效应晶体管的散热结构，涉及微电子领域。 散热结构包括与漏极端子或者源极端子和漏极端子连接的两个孔，其分别填充有高热电系数的N型材料和具有高热电系数的P型材料。 在漏极端子附近，用于具有高热电系数的N型材料的金属线相对于漏极端子施加高电位，并且用于具有高热电系数的P型材料的金属线 漏极端子相对于漏极端子施加低电位。 在源极端子附近具有高热电系数的N型材料的金属线相对于源极端子施加高电位，并且在源极端子附近的用于P型材料的金属线是 相对于源极端子施加较低的电位。 通过珀耳帖效应，在本发明中，热量可以在热电材料和源极/漏极之间的接触部分处被吸收，并且同时在热电材料和底部电极金属之间的连接部分消散，因此 在器件的有源区域中产生的热量有效地传递到衬底并通过散热器散发。

公开(公告)号：US08598636B2

公开(公告)日：2013-12-03

申请号：US13582624

申请日：2011-08-17

Applicant: Ru Huang ,  Xin Huang ,  Shoubin Xue ,  Yujie Ai

Inventor： Ru Huang ,  Xin Huang ,  Shoubin Xue ,  Yujie Ai

IPC: H01L29/80

CPC classification number: H01L23/38 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention discloses a heat dissipation structure for a SOI field effect transistor having a schottky source/drain, which relates to a field of microelectronics. The heat dissipation structure includes two holes connected with a drain terminal or with both a source terminal and a drain terminal, which are filled with an N-type material with high thermoelectric coefficient and a P-type material with high thermoelectric coefficient respectively. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a high potential with respect to the drain terminal, and a metal wire for the P-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a low potential with respect to the drain terminal. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the source terminal is applied a high potential with respect to the source terminal, and a metal wire for the P-type material in the vicinity of the source terminal is applied a lower potential with respect to the source terminal. By way of a Peltier effect, in the present invention heat can be absorbed at a contact portion between the thermoelectric material and the source/drain, and at the same time dissipated at a connection portion between the thermoelectric material and a bottom electrode metal, so that the heat generated in an active region of the device is effectively transferred to the substrate and dissipated through a heat sink.

Abstract translation: 本发明公开了一种具有肖特基源极/漏极的SOI场效应晶体管的散热结构，涉及微电子领域。 散热结构包括与漏极端子或者源极端子和漏极端子连接的两个孔，其分别填充有高热电系数的N型材料和具有高热电系数的P型材料。 在漏极端子附近，用于具有高热电系数的N型材料的金属线相对于漏极端子施加高电位，并且用于具有高热电系数的P型材料的金属线 漏极端子相对于漏极端子施加低电位。 在源极端子附近具有高热电系数的N型材料的金属线相对于源极端子施加高电位，并且在源极端子附近的用于P型材料的金属线是 相对于源极端子施加较低的电位。 通过珀耳帖效应，在本发明中，热量可以在热电材料和源极/漏极之间的接触部分处被吸收，并且同时在热电材料和底部电极金属之间的连接部分消散，因此 在器件的有源区域中产生的热量有效地传递到衬底并通过散热器散发。