Invention Grant
US08598645B2 System and method for improving mesa width in a semiconductor device
有权
用于改善半导体器件中的台面宽度的系统和方法
- Patent Title: System and method for improving mesa width in a semiconductor device
- Patent Title (中): 用于改善半导体器件中的台面宽度的系统和方法
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Application No.: US12910331Application Date: 2010-10-22
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Publication No.: US08598645B2Publication Date: 2013-12-03
- Inventor: Unsoon Kim , Angela T. Hui , Yider Wu , Kuo-Tung Chang , Hiroyuki Kinoshita
- Applicant: Unsoon Kim , Angela T. Hui , Yider Wu , Kuo-Tung Chang , Hiroyuki Kinoshita
- Applicant Address: US CA Sunnyvale US CA Sunnyvale
- Assignee: Spansion LLC,Advanced Micro Devices, Inc.
- Current Assignee: Spansion LLC,Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A method for forming a memory device is provided. A nitride layer is formed over a substrate. The nitride layer and the substrate are etched to form a trench. The nitride layer is trimmed on opposite sides of the trench to widen the trench within the nitride layer. The trench is filled with an oxide material. The nitride layer is stripped from the memory device, forming a mesa above the trench.
Public/Granted literature
- US20110037115A1 SYSTEM AND METHOD FOR IMPROVING MESA WIDTH IN A SEMICONDUCTOR DEVICE Public/Granted day:2011-02-17
Information query
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