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发明授权
US08599635B2 Fuse circuit and semiconductor memory device including the same 有权
保险丝电路和包括其的半导体存储器件

Fuse circuit and semiconductor memory device including the same
摘要：
A fuse circuit includes a program unit, a sensing unit and a control unit. The program unit is programmed in response to a program signal, and outputs a program output signal in response to a sensing enable signal. The sensing unit includes a variable resistor unit that has a resistance that varies based on a control signal, and generates a sensing output signal based on the resistance of the variable resistor unit and the program output signal. The control unit generates the control signal having a value changed depending on operation modes, and performs a verification operation with respect to the program unit based on the sensing output signal to generate a verification result. The program unit may be re-programmed based on the verification result.
摘要（中）：

熔丝电路包括程序单元，感测单元和控制单元。 程序单元响应于程序信号被编程，并且响应于感测使能信号而输出程序输出信号。 感测单元包括具有基于控制信号而变化的电阻的可变电阻器单元，并且基于可变电阻器单元的电阻和程序输出信号产生感测输出信号。 控制单元产生具有根据操作模式改变的值的控制信号，并且基于感测输出信号执行关于节目单元的验证操作以产生验证结果。 程序单元可以基于验证结果重新编程。

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