发明授权
US08603581B2 Manufacture of n-type chalcogenide compositions and their uses in photovoltaic devices
有权
制造n型硫属化物组合物及其在光伏器件中的应用
- 专利标题： Manufacture of n-type chalcogenide compositions and their uses in photovoltaic devices
- 专利标题（中）： 制造n型硫属化物组合物及其在光伏器件中的应用
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申请号： US12912205申请日： 2010-10-26
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公开(公告)号： US08603581B2公开(公告)日： 2013-12-10
- 发明人: Todd R. Bryden , Buford I. Lemon , Joseph George , Rebekah Kristine-Ligman Feist
- 申请人： Todd R. Bryden , Buford I. Lemon , Joseph George , Rebekah Kristine-Ligman Feist
- 申请人地址： US MN Midland
- 专利权人： Dow Global Technologies LLC
- 当前专利权人： Dow Global Technologies LLC
- 当前专利权人地址： US MN Midland
- 代理机构： Kagan Binder, PLLC
- 主分类号： C23C16/40
- IPC分类号： C23C16/40
摘要：
A layer of an n-type chalcogenide compositions including at least cadmium that is provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. Such n-type chalcogenide compositions are particularly useful in the making of photovoltaic devices.
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