Invention Grant
- Patent Title: Method of inspecting semiconductor device
- Patent Title (中): 检测半导体器件的方法
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Application No.: US13244434Application Date: 2011-09-24
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Publication No.: US08605277B2Publication Date: 2013-12-10
- Inventor: Satoshi Yamada , Takashi Karashima , Kenya Hironaga , Masatoshi Yasunaga , Yuji Fujimoto
- Applicant: Satoshi Yamada , Takashi Karashima , Kenya Hironaga , Masatoshi Yasunaga , Yuji Fujimoto
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2010-224927 20101004
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
Reliability of a semiconductor device is improved. In a flatness inspection of BGA (semiconductor device), there is formed a flatness standard where a permissible range in the direction of (+) of flatness at normal temperature is smaller than a permissible range in the direction of (−). With use of the above flatness standard, a flatness inspection of the semiconductor device at normal temperature is performed to determine whether the mounted item is non-defective or defective. With the above process, defective mounting caused by a package warp when heated during reflow soldering etc. is reduced and reliability of BGA is improved. At the same time, flatness management of a substrate-type semiconductor device with better consideration of a mounting state can be performed.
Public/Granted literature
- US20120081702A1 METHOD OF INSPECTING SEMICONDUCTOR DEVICE Public/Granted day:2012-04-05
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