发明授权
- 专利标题： Method of lithography
- 专利标题（中）： 光刻方法
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申请号： US12915270申请日： 2010-10-29
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公开(公告)号： US08609325B2公开(公告)日： 2013-12-17
- 发明人: Fong-Cheng Lee , Ching-Yu Chang
- 申请人： Fong-Cheng Lee , Ching-Yu Chang
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe, Hauptman & Ham, LLP
- 主分类号： G03F7/26
- IPC分类号： G03F7/26
摘要：
A lithography method of manufacturing integrated circuits is disclosed. A photoalignment layer is formed on a substrate. A treatment is performed to reorganize and align the photoalignment molecules. A photoresist layer may be formed on the photoalignment layer in a bi-layer separate coating or with the photoalignment layer in a bound-bind structure.
公开/授权文献
- US20120107747A1 METHOD OF LITHOGRAPHY 公开/授权日：2012-05-03
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