发明授权
US08609530B2 Method for forming a three-dimensional structure of metal-insulator-metal type
有权
用于形成金属 - 绝缘体 - 金属型三维结构的方法
- 专利标题： Method for forming a three-dimensional structure of metal-insulator-metal type
- 专利标题（中）： 用于形成金属 - 绝缘体 - 金属型三维结构的方法
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申请号： US13052262申请日： 2011-03-21
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公开(公告)号： US08609530B2公开(公告)日： 2013-12-17
- 发明人: Simon Jeannot , Pascal Tannhof
- 申请人： Simon Jeannot , Pascal Tannhof
- 申请人地址： FR Montrouge US NY Armonk
- 专利权人： STMicroelectronics S.A.,International Business Machines Corporation
- 当前专利权人： STMicroelectronics S.A.,International Business Machines Corporation
- 当前专利权人地址： FR Montrouge US NY Armonk
- 代理机构： Wolf, Greenfield & Sacks, P.C.
- 优先权： FR1052034 20100322
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer on the structure; forming, in the trench, a conductive material; and planarizing the structure.
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