发明授权
US08610192B2 Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regions
有权
在字线和有源区域的相交位置处具有电荷存储层的非易失性存储器件
- 专利标题: Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regions
- 专利标题(中): 在字线和有源区域的相交位置处具有电荷存储层的非易失性存储器件
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申请号: US13173759申请日: 2011-06-30
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公开(公告)号: US08610192B2公开(公告)日: 2013-12-17
- 发明人: Won-Cheol Jeong , Su-Jin Ahn , Yoon-Moon Park
- 申请人: Won-Cheol Jeong , Su-Jin Ahn , Yoon-Moon Park
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2006-0029056 20060330
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/788
摘要:
A non-volatile memory device can include a plurality of parallel active regions that are defined by a plurality of device isolation layers formed on a semiconductor substrate, where each of the plurality of parallel active regions extends in a first direction and has a top surface and sidewalls. A plurality of parallel word lines can extend in a second direction and cross over the plurality of parallel active regions at intersecting locations. A plurality of charge storage layers can be disposed at the intersecting locations between the plurality of parallel active regions and the plurality of parallel word lines. Each of the plurality of charge storage layers at the intersecting locations can have a first side and a second side that is parallel to the second direction and can have a first length, a third side and a fourth side that are parallel to the first direction and can have a second length, where the first length is less than the second length.
公开/授权文献
- US20110254079A1 NON-VOLATILE MEMORY DEVICES 公开/授权日:2011-10-20