发明授权
- 专利标题： On-Chip RF shields with front side redistribution lines
- 专利标题（中）： 具有前端再分配线的片上RF屏蔽
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申请号： US13456331申请日： 2012-04-26
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公开(公告)号： US08617929B2公开(公告)日： 2013-12-31
- 发明人: Hans-Joachim Barth , Thorsten Meyer , Markus Brunnbauer , Jenei Snezana
- 申请人： Hans-Joachim Barth , Thorsten Meyer , Markus Brunnbauer , Jenei Snezana
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A system on chip comprising a RF shield is disclosed. In one embodiment, the system on chip includes a RF component disposed on a chip, first redistribution lines disposed above the system on chip, the first redistribution lines coupled to I/O connection nodes. The system on chip further includes second redistribution lines disposed above the RF component, the second redistribution lines coupled to ground potential nodes. The second redistribution lines include a first set of parallel metal lines coupled together by a second set of parallel metal lines.
公开/授权文献
- US20120208320A1 On-Chip RF Shields with Front Side Redistribution Lines 公开/授权日：2012-08-16
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