Invention Grant
US08618592B2 Dynamic random access memory (DRAM) cells and methods for fabricating the same
有权
动态随机存取存储器（DRAM）单元及其制造方法
- Patent Title: Dynamic random access memory (DRAM) cells and methods for fabricating the same
- Patent Title (中): 动态随机存取存储器（DRAM）单元及其制造方法
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Application No.: US13098193Application Date: 2011-04-29
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Publication No.: US08618592B2Publication Date: 2013-12-31
- Inventor: Hyun-Jin Cho , Sang H. Dhong , Jung-Suk Goo , Gurupada Mandal
- Applicant: Hyun-Jin Cho , Sang H. Dhong , Jung-Suk Goo , Gurupada Mandal
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor memory cell is provided that includes a trench capacitor and an access transistor. The access transistor comprises a source region, a drain region, a gate structure overlying the trench capacitor, and an active body region that couples the drain region to the source region. The active body region directly contacts the trench capacitor.
Public/Granted literature
- US20110204429A1 DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELLS AND METHODS FOR FABRICATING THE SAME Public/Granted day:2011-08-25
Information query
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