利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

44 条记录 (耗时 0.058 秒)

    Dynamic random access memory (DRAM) cells and methods for fabricating the same
    2.
    发明授权
    Dynamic random access memory (DRAM) cells and methods for fabricating the same 有权
    动态随机存取存储器（DRAM）单元及其制造方法

    公开(公告)号：US07977172B2

    公开(公告)日：2011-07-12

    申请号：US12330282

    申请日：2008-12-08

    申请人： Hyun-Jin Cho ,  Sang H. Dhong ,  Jung-Suk Goo ,  Gurupada Mandal

    发明人： Hyun-Jin Cho ,  Sang H. Dhong ,  Jung-Suk Goo ,  Gurupada Mandal

    IPC分类号： H01L21/84

    CPC分类号： H01L27/10802 ,  H01L27/108 ,  H01L27/1082 ,  H01L27/1087 ,  H01L29/7841

    摘要： A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench. Conductivity determining impurities are implanted into the semiconductor structure to create a well region in the semiconductor layer that is directly coupled to the trench capacitor. A gate structure is formed overlying a portion of the well region. Conductivity determining ions are then implanted into other portions of the well region to form a source region and a drain region, and to define an active body region between the source region and the drain region. The active body region directly contacts the trench capacitor.

    摘要翻译： 提供一种制造存储单元的方法。 在包括半导体层的半导体结构中形成沟槽，并且在沟槽中形成沟槽电容器。 将导电性确定杂质注入到半导体结构中以在直接耦合到沟槽电容器的半导体层中形成阱区。 形成覆盖阱区域的一部分的栅极结构。 然后将确定电导的离子注入阱区的其它部分以形成源区和漏区，并且在源区和漏区之间限定有源体区。 有源体区域直接接触沟槽电容器。

    Methods for distributing log block associativity for real-time system and flash memory devices performing the same
    3.
    发明授权
    Methods for distributing log block associativity for real-time system and flash memory devices performing the same 有权
    用于分发执行相同功能的实时系统和闪存设备的日志块关联性的方法

    公开(公告)号：US08261010B2

    公开(公告)日：2012-09-04

    申请号：US12356306

    申请日：2009-01-20

    申请人： Young-Ik Eom ,  Dong-Kun Shin ,  Hyun-Jin Cho

    发明人： Young-Ik Eom ,  Dong-Kun Shin ,  Hyun-Jin Cho

    IPC分类号： G06F13/00 ,  G06F13/28

    CPC分类号： G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7202 ,  G06F2212/7203

    摘要： A method for distributing log block associativity in log buffer-based flash translation layer (FTL) includes, if write request on page p is generated, checking whether log block associated with corresponding data block that write request is generated exists or not by checking log block mapping table storing mapping information between data blocks and log blocks, wherein the associativity of each log block to data block is set to equal to or less than predetermined value K in advance, and K is a natural number, if log block associated with corresponding data block that write request is generated exists, checking whether associated log block is random log block or sequential log block, and if associated log block is random log block, writing data that write request is generated in first free page of random log block.

    摘要翻译： 在基于日志缓冲的闪存转换层（FTL）中分配日志块关联性的方法包括：如果生成了第p页上的写请求，则通过检查日志块来检查是否存在与写入请求相关联的数据块相关联的日志块是否存在 映射表存储数据块和日志块之间的映射信息，其中每个日志块与数据块的相关性被预先设置为等于或小于预定值K，并且如果与对应数据相关联的日志块，则K是自然数 产生写请求的块，检查关联的日志块是随机日志块还是顺序日志块，如果关联的日志块是随机日志块，则写入请求的数据在随机日志块的第一个空闲页中生成。

    Display device using diffusive light guide plate
    4.
    发明授权
    Display device using diffusive light guide plate 有权
    显示装置使用漫射导光板

    公开(公告)号：US08246187B2

    公开(公告)日：2012-08-21

    申请号：US12819592

    申请日：2010-06-21

    申请人： Byoung-Ho Cheong ,  Guk-Hyun Kim ,  Oleg Prudnikov ,  Seung-Won Park ,  Hyun-Jin Cho

    发明人： Byoung-Ho Cheong ,  Guk-Hyun Kim ,  Oleg Prudnikov ,  Seung-Won Park ,  Hyun-Jin Cho

    IPC分类号： G09F13/04

    CPC分类号： G02F1/133603 ,  G02F1/133611

    摘要： A backlight unit includes a light source substrate on which a light source is mounted, a first light source plate which is disposed on the light source substrate and includes a cylindrical aperture corresponding to the light source, and a second light source plate which is disposed on the first light source plate and includes a partial transmission pattern on a bottom surface thereof. The partial transmission pattern corresponds to the aperture and allows part of light emitted from the light source to pass therethrough.

    摘要翻译： 背光单元包括其上安装有光源的光源基板，设置在光源基板上并包括与光源对应的圆筒孔的第一光源板和设置在光源基板上的第二光源板 第一光源板并且在其底表面上包括部分透射图案。 部分透射图案对应于孔径，并且允许从光源发射的光的一部分通过。

    Semiconductor switching device
    5.
    发明授权
    Semiconductor switching device 有权
    半导体开关装置

    公开(公告)号：US08048724B2

    公开(公告)日：2011-11-01

    申请号：US12707519

    申请日：2010-02-17

    申请人： Hyun-Jin Cho

    发明人： Hyun-Jin Cho

    IPC分类号： H01L21/332

    CPC分类号： G11C13/0004

    摘要： A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.

    摘要翻译： 提供了一种开关装置及其制作和操作方法。 一方面，提供了一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。 提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

    Semiconductor device with leakage implant and method of fabrication
    6.
    发明授权
    Semiconductor device with leakage implant and method of fabrication 失效
    具有漏电注入的半导体器件及其制造方法

    公开(公告)号：US07491586B2

    公开(公告)日：2009-02-17

    申请号：US11159514

    申请日：2005-06-22

    申请人： Andrew E Horch ,  Hyun-Jin Cho ,  Farid Nemati ,  Scott Robins ,  Rajesh N. Gupta ,  Kevin J. Yang

    发明人： Andrew E Horch ,  Hyun-Jin Cho ,  Farid Nemati ,  Scott Robins ,  Rajesh N. Gupta ,  Kevin J. Yang

    IPC分类号： H01L21/332 ,  H01L21/04 ,  H01L21/425

    CPC分类号： G11C11/39 ,  H01L27/0817 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749

    摘要： A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An activation anneal may activate dopants previously implanted for the different regions. A damaging implant of germanium or xenon or argon may be directed into select regions of the silicon including at least one p-n junction region for the access device and the thyristor. A re-crystallization anneal may then be performed to re-crystallize at least some of the damaged lattice structure resulting from the damaging implant. The re-crystallization anneal may use a temperature less than that of the previous activation anneal.

    摘要翻译： 制造基于晶闸管的存储器的方法可以包括在硅中形成用于限定可控硅和串联连接的存取装置的不同的相反导电型区域。 激活退火可以激活先前为不同区域植入的掺杂剂。 可以将锗或氙或氩的有害植入物引导到硅的选择区域中，包括用于进入装置和晶闸管的至少一个p-n结区域。 然后可以进行重结晶退火，以重新结晶由损伤性植入物引起的至少一些损伤的晶格结构。 再结晶退火可以使用比先前激活退火的温度低的温度。

    Semiconductor Switching Device
    8.
    发明申请
    Semiconductor Switching Device 有权
    半导体开关器件

    公开(公告)号：US20080031036A1

    公开(公告)日：2008-02-07

    申请号：US11615983

    申请日：2006-12-24

    申请人： Hyun-Jin Cho

    发明人： Hyun-Jin Cho

    IPC分类号： G11C11/34

    CPC分类号： G11C13/0004

    摘要： A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.

    摘要翻译： 提供了一种开关装置及其制作和操作方法。 一方面，提供了一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。 提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

    Dynamic data restore in thyristor-based memory device
    9.
    发明授权
    Dynamic data restore in thyristor-based memory device 失效
    基于晶闸管的存储器件中的动态数据恢复

    公开(公告)号：US06885581B2

    公开(公告)日：2005-04-26

    申请号：US10472737

    申请日：2002-04-05

    申请人： Farid Nemati ,  Hyun-Jin Cho ,  Robert Homan Igehy

    发明人： Farid Nemati ,  Hyun-Jin Cho ,  Robert Homan Igehy

    IPC分类号： G11C7/00 ,  G11C11/00 ,  G11C11/39 ,  H01L29/866

    CPC分类号： G11C11/39

    摘要： A dynamically-operating restoration circuit (106) is used to apply a voltage or current restore pulse signal to thyristor-based memory cells (108) and therein restore data in the cell using the internal positive feedback loop of the thyristor (110). In one example implementation, the internal positive feedback loop in the thyristor (110) is used to restore the conducting state of a device after the thyristor current drops below the holding current. A pulse and/or periodic waveform are defined and applied to ensure that the thyristor is not released from its conducting state. The time average of the periodic restore current in the thyristor may be lower than the holding current threshold. While not necessarily limited to memory cells that are thyristor-based, various embodiments of the invention have been found to be the particularly useful for high-speed, low-power memory cells in which a thin capacitively-coupled thyristor is used to provide a bi-stable storage element.

    摘要翻译： 使用动态操作的恢复电路（106）将电压或电流恢复脉冲信号施加到基于晶闸管的存储器单元（108），并且其中使用晶闸管（110）的内部正反馈环路在单元中恢复数据。 在一个示例实现中，晶闸管（110）中的内部正反馈环路用于在晶闸管电流下降到保持电流之前恢复器件的导通状态。 定义并施加脉冲和/或周期波形以确保晶闸管不从其导通状态释放。 晶闸管周期性恢复电流的时间平均值可能低于保持电流阈值。 虽然不一定限于基于晶闸管的存储器单元，但是已经发现本发明的各种实施例对于其中使用薄电容耦合晶闸管来提供双向的高速，低功率存储器单元特别有用 稳定存储元件

    Thyristor-based device including trench dielectric isolation for thyristor-body regions
    10.
    发明授权
    Thyristor-based device including trench dielectric isolation for thyristor-body regions 失效
    基于晶闸管的器件包括可晶体管体区域的沟槽介质隔离

    公开(公告)号：US06727528B1

    公开(公告)日：2004-04-27

    申请号：US09815213

    申请日：2001-03-22

    申请人： Scott Robins ,  Andrew Horch ,  Farid Nemati ,  Hyun-Jin Cho

    发明人： Scott Robins ,  Andrew Horch ,  Farid Nemati ,  Hyun-Jin Cho

    IPC分类号： H01L2974

    CPC分类号： H01L29/66363 ,  H01L21/76229 ,  H01L21/76237 ,  H01L21/763 ,  H01L27/0617 ,  H01L27/0817

    摘要： A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According to one example embodiment of the present invention, the semiconductor substrate is trenched adjacent a doped or dopable substrate region, which is formed to include at least two vertically-adjacent thyristor regions of different polarity. A capacitively-coupled control port for the thyristor is coupled to at least one of the thyristor regions. The trench also includes a dielectric material for electrically insulating the vertically-adjacent thyristor regions. The thyristor is electrically connected to other circuitry in the device, such as a transistor, and used to form a device, such as a memory cell.

    摘要翻译： 半导体器件包括设计用于减少或消除在NDR器件的形成和操作中通常经历的制造和操作困难的晶闸管。 根据本发明的一个示例性实施例，半导体衬底在掺杂或可掺杂的衬底区域附近被沟槽，该衬底区域被形成为包括具有不同极性的至少两个垂直相邻的晶闸管区域。 用于晶闸管的电容耦合控制端口耦合到至少一个晶闸管区域。 沟槽还包括用于使垂直相邻的晶闸管区域电绝缘的电介质材料。 晶闸管电连接到器件中的其它电路，例如晶体管，并用于形成诸如存储器单元的器件。