Invention Grant
- Patent Title: Fast power-on bias circuit
- Patent Title (中): 快速上电偏置电路
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Application No.: US13341483Application Date: 2011-12-30
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Publication No.: US08618869B2Publication Date: 2013-12-31
- Inventor: Wayne Dettloff , John Wilson , Lei Luo , Brian Leibowitz , Jared Zerbe , Pravin Kumar Venkatesan
- Applicant: Wayne Dettloff , John Wilson , Lei Luo , Brian Leibowitz , Jared Zerbe , Pravin Kumar Venkatesan
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Hamilton, Brook, Smith & Reynolds, P.C.
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
Conventional bias circuits exhibit a number of limitations, including the time required to power-up a bias circuit following a low-power state. Large current surges in the supply network induce ringing, further complicating a power-up process. Example embodiments reduce power-up time and minimize current surges in the supply by selectively charging and discharging capacitance to the circuit during power-up and power-down of the bias circuit.
Public/Granted literature
- US20120169412A1 FAST POWER-ON BIAS CIRCUIT Public/Granted day:2012-07-05
Information query
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