发明授权
- 专利标题: Thin film transistor, display device and liquid crystal display device and method for manufacturing the same
- 专利标题(中): 薄膜晶体管,显示装置和液晶显示装置及其制造方法
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申请号: US13552845申请日: 2012-07-19
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公开(公告)号: US08619219B2公开(公告)日: 2013-12-31
- 发明人: Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
- 申请人: Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2003-403666 20031202; JP2003-403848 20031202
- 主分类号: G02F1/1333
- IPC分类号: G02F1/1333
摘要:
As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.