发明授权
- 专利标题: Non-deleterious technique for creating continuous conductive circuits
- 专利标题(中): 用于创建连续导电电路的无害技术
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申请号: US13035531申请日: 2011-02-25
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公开(公告)号: US08621749B2公开(公告)日: 2014-01-07
- 发明人: Shen-Hung Yi , Pen-Yi Liao
- 申请人: Shen-Hung Yi , Pen-Yi Liao
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Green Point Enterprises Co., Ltd
- 当前专利权人: Taiwan Green Point Enterprises Co., Ltd
- 当前专利权人地址: TW Hsinchu
- 代理机构: Foley & Lardner LLP
- 主分类号: H01R43/00
- IPC分类号: H01R43/00 ; H05K13/00
摘要:
A non-deleterious method for producing a continuous conductive circuit upon a non-conductive substrate can begin with the application of a metallic base layer upon a surface of a non-conductive substrate. A circuit pattern can be created within the metallic base layer based upon a circuit design. The metallic base layer comprising the circuit pattern can be physically separated from the remainder of the metallic base layer on the non-conductive substrate. The region of the non-conductive substrate surface that encloses the circuit pattern can be called the plating region. The remainder of the non-conductive substrate surface can be called the non-plating region. A first metal layer can be added upon the metallic base layer. A second metal layer can be added upon the first metal layer of the plating region. The second metal layer can be electrically conductive and restricted from forming on the first metal layer of the non-plating region.
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