Invention Grant
- Patent Title: Light emitting diode substrate and light emitting diode
- Patent Title (中): 发光二极管基板和发光二极管
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Application No.: US13472480Application Date: 2012-05-16
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Publication No.: US08624279B2Publication Date: 2014-01-07
- Inventor: Bo-Hsiang Tseng , Yi-Shan Hsieh , Bo-Wen Lin , Kun-Lin Yang , Chun-Yen Peng , Wen-Ching Hsu
- Applicant: Bo-Hsiang Tseng , Yi-Shan Hsieh , Bo-Wen Lin , Kun-Lin Yang , Chun-Yen Peng , Wen-Ching Hsu
- Applicant Address: TW Hsinchu
- Assignee: Sino-American Silicon Products Inc.
- Current Assignee: Sino-American Silicon Products Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100210043U 20110602; TW100213825U 20110727
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L29/16 ; H01L31/12 ; H01L29/18
Abstract:
A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 μm. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has a first base angle and a second base angle, wherein the second base angle is larger than the first base angle, and the second base angle is 50° to 70°. This LED substrate has high light-emitting efficiency.
Public/Granted literature
- US20120305965A1 LIGHT EMITTING DIODE SUBSTRATE AND LIGHT EMITTING DIODE Public/Granted day:2012-12-06
Information query
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