发明授权
- 专利标题: Logic-based multiple time programming memory cell
- 专利标题(中): 基于逻辑的多时间编程存储单元
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申请号: US13485920申请日: 2012-06-01
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公开(公告)号: US08625350B2公开(公告)日: 2014-01-07
- 发明人: Wen-Hao Ching , Shih-Chen Wang , Ching-Sung Yang
- 申请人: Wen-Hao Ching , Shih-Chen Wang , Ching-Sung Yang
- 申请人地址: TW Hsinchu Science Park, Hsin-Chu
- 专利权人: eMemory Technology Inc.
- 当前专利权人: eMemory Technology Inc.
- 当前专利权人地址: TW Hsinchu Science Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A non-volatile memory system includes one or more non-volatile memory cells. Each non-volatile memory cell provides a floating gate, a coupling device, a first floating gate transistor, and a second floating gate transistor. The coupling device is located in a first conductivity region. The first floating gate transistor is located in a second conductivity region, and supplies read current sensed during a read operation. The second floating gate transistor is located in a third conductivity region. Such non-volatile memory cell further provides two transistors for injecting negative charge into the floating gate during a programming operation, and removing negative charge from the second floating gate transistor during an erase operation. The floating gate is shared by the first floating gate transistor, the coupling device, and the second floating gate transistor, and extends over active regions of the first floating gate transistor, the coupling device and the second floating gate transistor.
公开/授权文献
- US20120236635A1 Logic-Based Multiple Time Programming Memory Cell 公开/授权日:2012-09-20