Invention Grant
- Patent Title: HV interconnection solution using floating conductors
- Patent Title (中): 使用浮动导体的HV互连解决方案
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Application No.: US13007220Application Date: 2011-01-14
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Publication No.: US08629513B2Publication Date: 2014-01-14
- Inventor: Ru-Yi Su , Fu-Chih Yang , Chun-Lin Tsai , Ker Hsiao Huo , Chih-Chang Cheng , Ruey-Hsin Liu
- Applicant: Ru-Yi Su , Fu-Chih Yang , Chun-Lin Tsai , Ker Hsiao Huo , Chih-Chang Cheng , Ruey-Hsin Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A device includes a first and a second heavily doped region in a semiconductor substrate. An insulation region has at least a portion in the semiconductor substrate, wherein the insulation region is adjacent to the first and the second heavily doped regions. A gate dielectric is formed over the semiconductor substrate and having a portion over a portion of the insulation region. A gate is formed over the gate dielectric. A floating conductor is over and vertically overlapping the insulation region. A metal line includes a portion over and vertically overlapping the floating conductor, wherein the metal line is coupled to, and carries a voltage of, the second heavily doped region.
Public/Granted literature
- US20120181629A1 HV Interconnection Solution Using Floating Conductors Public/Granted day:2012-07-19
Information query
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