发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US13061774申请日： 2010-09-28
-
公开(公告)号： US08633098B2公开(公告)日： 2014-01-21
- 发明人: Kai Han , Wenwu Wang , Xiaolei Wang , Shijie Chen , Dapeng Chen
- 申请人： Kai Han , Wenwu Wang , Xiaolei Wang , Shijie Chen , Dapeng Chen
- 申请人地址： CN Beijing
- 专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址： CN Beijing
- 代理机构： Troutman Sanders LLP
- 优先权： CN201010147605 20100414
- 国际申请： PCT/CN2010/077384 WO 20100928
- 国际公布： WO2011/127720 WO 20111020
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
The present invention relates to the field of semiconductor manufacturing. The present invention provides a method of manufacturing a semiconductor device, which comprises: providing a semiconductor substrate; forming an interface layer, a gate dielectric layer and a gate electrode on the substrate; forming a metal oxygen absorption layer on the gate electrode; performing a thermal annealing process on the semiconductor device so that the metal oxygen absorption layer absorbs oxygen in the interface layer and the thickness of the interface layer is reduced. By means of the present invention, the thickness of the interface layer can be reduced on one hand, and on the other hand the metal in the metal oxygen absorption layer is made to diffuse into the gate electrode and/or the gate dielectric layer through the annealing process, which further achieves the effects of adjusting the effective work function and controlling the threshold voltage.
公开/授权文献
- US20120021596A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 公开/授权日：2012-01-26