发明授权
US08633473B2 High contrast light emitting device and method for manufacturing the same 有权
高对比度发光装置及其制造方法

High contrast light emitting device and method for manufacturing the same
摘要:
It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter.A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/06 ..按其形状区分的;按各半导体区域的形状、相对尺寸或配置区分的
H01L29/08 ...具有连接到1个通有待整流、放大或切换的电流的电极上去的半导体区域的;并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的
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