公开(公告)号：US08923589B2

公开(公告)日：2014-12-30

申请号：US13290227

申请日：2011-11-07

申请人： Takeshi Noda

发明人： Takeshi Noda

IPC分类号： G06T11/00

CPC分类号： G06T11/006 ,  G06T2211/436

摘要： An image processing apparatus which processes an image obtained by tomosynthesis shooting by using a radiation source and a two-dimensional detector. The image processing apparatus includes an obtaining unit configured to obtain a plurality of projection data output from the two-dimensional detector upon tomosynthesis shooting; and a reconstruction unit configured to perform analytical reconstruction processing of a tomogram of a subject from the plurality of projection data obtained by tomosynthesis shooting without transforming the projection data into virtual projection data on a virtual CT detection plane virtually set to be perpendicular to a radiation center direction of the radiation source.

摘要翻译： 一种图像处理装置，其通过使用辐射源和二维检测器处理通过断层摄影拍摄获得的图像。 图像处理装置包括获取单元，被配置为在层析合成拍摄时获得从二维检测器输出的多个投影数据; 以及重建单元，被配置为从通过层析合成拍摄获得的多个投影数据中对被摄体的断层图像进行分析重建处理，而不将投影数据变换为虚拟设置为垂直于辐射中心的虚拟CT检测平面上的虚拟投影数据 辐射源的方向。

公开(公告)号：US07732268B2

公开(公告)日：2010-06-08

申请号：US11882828

申请日：2007-08-06

申请人： Hideaki Shimmoto ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda ,  Takuo Kaitoh

发明人： Hideaki Shimmoto ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L27/1285

摘要： A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.

摘要翻译： 一种制造显示装置的方法，通过在显示区域中形成具有使用非晶硅的TFT器件的多个像素，从而在衬底的显示区域的外侧使非晶硅脱氢和多晶化时提高多晶硅的质量 并且在显示区域的外部形成具有使用多晶硅的半导体器件的多个驱动电路，该方法包括仅在用于形成驱动电路的区域中的非晶硅上照射第一连续振荡激光，以及 其周边区域进行脱氢，然后仅将第二连续振荡区域照射到脱氢区域以将非晶硅多晶化，其中第一连续振荡激光器照射的区域比第二连续振荡区域 激光被照射。

公开(公告)号：US20100096632A1

公开(公告)日：2010-04-22

申请号：US12578641

申请日：2009-10-14

申请人： Takeshi KURIYAGAWA ,  Takeshi Noda ,  Takuo Kaitoh

发明人： Takeshi KURIYAGAWA ,  Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L27/12 ,  H01L21/77

CPC分类号： H01L27/124 ,  H01L27/1248 ,  H01L29/66765

摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.

摘要翻译： 形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。 通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。 第一线层形成为覆盖第一接触孔。 在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。 在第二接触孔上形成第二线层。

公开(公告)号：US20070200653A1

公开(公告)日：2007-08-30

申请号：US11678425

申请日：2007-02-23

申请人： Yasuhiro Matsumoto ,  Yosuke Tonami ,  Yoshinobu Ishikawa ,  Nobutaka Kubota ,  Takeshi Noda ,  Kazuhiro Matsuo ,  Kenji Kato ,  Mitsutaka Homma ,  Takao Wakabayashi

发明人： Yasuhiro Matsumoto ,  Yosuke Tonami ,  Yoshinobu Ishikawa ,  Nobutaka Kubota ,  Takeshi Noda ,  Kazuhiro Matsuo ,  Kenji Kato ,  Mitsutaka Homma ,  Takao Wakabayashi

IPC分类号： H01H9/00

CPC分类号： H01F7/122 ,  H01F7/1615 ,  H01F7/1623

摘要： A needle 2 includes a plunger member 21 and a collar member 22, and is provided to be reciprocable from a latch position to a latch release position inside a stator 1. A first magnet coil 31 has sufficient electromagnetic power to put in a latch state the needle 2 which is in a latch release state on energization. A permanent magnet 4 has sufficient absorption power for absorbing a collar member 22 of the needle 2 put in the latch state by the electromagnetic power of the first magnet coil 31 and maintaining the latch state even when the first magnet coil 31 is in a non-energized state. A second magnet coil 32 can diminish magnetic fluxes of the permanent magnet 4 and change the needle 2 from the latch state to the latch release state on energization. Thus, energy efficiency is improved by varying how to energize the magnet coils according to the state of a load side.

摘要翻译： 针2包括柱塞构件21和套环构件22，并且设置成能够从定位器1内的闩锁位置向闩锁释放位置往复运动。 第一电磁线圈31具有足够的电磁功率，以在闩锁状态下将处于闩锁释放状态的针2通电。 永磁体4具有足够的吸收力，用于吸收通过第一电磁线圈31的电磁力而处于闩锁状态的针2的轴环构件22，并且即使当第一磁体线圈31处于非磁性状态时也保持闩锁状态， 通电状态。 第二磁体线圈32可以减小永磁体4的磁通量，并且在通电时将针2从锁定状态改变到闩锁释放状态。 因此，通过根据负载侧的状态改变如何对磁体线圈通电来提高能量效率。

公开(公告)号：US20070117292A1

公开(公告)日：2007-05-24

申请号：US11593552

申请日：2006-11-07

申请人： Yasukazu Kimura ,  Toshihiko Itoga ,  Takeshi Noda

发明人： Yasukazu Kimura ,  Toshihiko Itoga ,  Takeshi Noda

IPC分类号： H01L21/84 ,  H01L27/148

CPC分类号： H01L27/1281 ,  H01L27/1285 ,  H01L27/1296

摘要： The present invention provides a display-device-use substrate which is strip-crystallized while minimizing the generation of peeling of a semiconductor by suppressing the generation of aggregation at the time of crystallization due to the radiation of continuous oscillation laser beams. A silicon nitride film and a silicon oxide film which constitutes a background film are formed on a glass substrate on which projecting portions are formed, and a silicon base film is formed on the silicon nitride film and a silicon oxide film. Banks which intersect the scanning directions of laser beams are positioned below the silicon base substrate. The aggregation which is generated by the scanning of laser beams is stopped at a portion after the laser beams gets over the bank and, thereafter, the strip crystal silicon film is formed normally.

摘要翻译： 本发明提供一种显示装置用基板，其通过抑制由连续振荡激光束的辐射引起的结晶时的聚集的产生而使半导体的剥离最小化而进行带状结晶化。 在形成有突出部的玻璃基板上形成氮化硅膜和构成背景膜的氧化硅膜，在氮化硅膜和氧化硅膜上形成硅基膜。 与激光束的扫描方向相交的堤位于硅基底的下方。 通过激光扫描产生的聚集在激光束越过堤岸之后的一部分停止，此后，正常形成条状晶体硅膜。

公开(公告)号：US07193693B2

公开(公告)日：2007-03-20

申请号：US10991482

申请日：2004-11-19

申请人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

发明人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

IPC分类号： G01N21/00 ,  G01J1/00 ,  B23K26/06

CPC分类号： B23K26/073 ,  B23K26/702 ,  H01L27/14625

摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing.In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.

摘要翻译： 提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号 。 入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件， 基于信号处理的结果。 以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

公开(公告)号：US20070045730A1

公开(公告)日：2007-03-01

申请号：US11542217

申请日：2006-10-04

申请人： Takeshi Noda ,  Hidehito Kitakado ,  Takuya Matsuo

发明人： Takeshi Noda ,  Hidehito Kitakado ,  Takuya Matsuo

IPC分类号： H01L29/76

CPC分类号： H01L29/66757 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.

摘要翻译： 提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。 在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。 在栅极绝缘膜上形成主栅极。 在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。 在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。 随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。

公开(公告)号：US07178643B2

公开(公告)日：2007-02-20

申请号：US10858283

申请日：2004-06-02

申请人： Toshifumi Maehara ,  Katsuhiro Miyata ,  Yukimasa Mitsude ,  Takayuki Mukasa ,  Takeshi Noda ,  Yoshiaki Saitoh

发明人： Toshifumi Maehara ,  Katsuhiro Miyata ,  Yukimasa Mitsude ,  Takayuki Mukasa ,  Takeshi Noda ,  Yoshiaki Saitoh

IPC分类号： F16D65/09

CPC分类号： F16D65/565 ,  F16D51/48 ,  F16D2121/02 ,  F16D2121/14 ,  F16D2123/00 ,  F16D2125/28 ,  F16D2125/30

摘要： A cam mechanism 7 provided as a shoe drive mechanism includes a cam supporting plate 21 being loosely and rotatably fitted on an anchor pin 10 for receiving a shoe operating force, a first cam plate 23 rotatably connected to the cam supporting plate 21 at an outer cam supporting position which is a position shifted away from the anchor pin 10 radially outwardly of the drum, a second cam plate 25 rotatably connected to the cam supporting plate 21 at an inner cam supporting position which is away from the anchor pin 10 toward an operating force generator 6, so that a pair of brake shoes 3, 4 are opened outwardly by the separate cam plates 23, 25, respectively.

摘要翻译： 设置为靴式驱动机构的凸轮机构7包括：凸轮支撑板21，其松动地且可旋转地装配在用于承受鞋的作用力的固定销10上;第一凸轮板23，其可旋转地连接到凸轮支撑板21的外凸轮 支撑位置，其是远离鼓的径向向外的锚定销10的位置;第二凸轮板25，其在内凸轮支撑位置处可旋转地连接到凸轮支撑板21，所述内凸轮支撑位置远离固定销10朝向操作力 发电机6，使得一对制动蹄3,4分别由分离的凸轮板23,25向外打开。

公开(公告)号：US20050168415A1

公开(公告)日：2005-08-04

申请号：US11041264

申请日：2005-01-25

申请人： Takeshi Noda ,  Ryota Fukumoto

发明人： Takeshi Noda ,  Ryota Fukumoto

IPC分类号： H01L29/786 ,  G09F9/30 ,  G09G3/30 ,  G09G3/32 ,  H01L21/77 ,  H01L27/12 ,  H01L27/32 ,  H05B33/00 ,  H05B33/08

CPC分类号： G09G3/3233 ,  G09G3/3291 ,  G09G2300/0465 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2320/0295 ,  G09G2320/043 ,  H01L27/1296 ,  H01L27/3262 ,  H01L27/3276

摘要： A light emitting device is provided where an area occupied by capacitors is decreased, luminance variations of light emitting elements caused by characteristics variations or fluctuations of the gate voltage Vgs of driving TFTs can be suppressed. Each of multiple pixels includes a light emitting element, a first transistor for determining a current value supplied thereto, a second transistor for selecting emission/non-emission thereof according to video signals, a first power supply line, and a second power supply line shared by the multiple pixels. In addition, a compensation circuit is provided each of which includes a third transistor whose gate and drain are connected to the second power supply line, and a fourth transistor for controlling the connection between a third power supply line and the gate and drain of the third transistor. The first and second transistors are connected in series between the light emitting element and the first power supply line, and the gate of the first transistor is connected to the second power supply line.

摘要翻译： 提供了一种发光器件，其中由电容器占据的面积减小，可以抑制由驱动TFT的栅极电压Vgs的特性变化或波动引起的发光元件的亮度变化。 多个像素中的每一个包括发光元件，用于确定提供给其的电流值的第一晶体管，用于根据视频信号选择发光/不发光的第二晶体管，第一电源线和第二电源线共享 由多个像素。 此外，提供了一种补偿电路，每个补偿电路包括栅极和漏极连接到第二电源线的第三晶体管，以及用于控制第三电源线与第三电源线的栅极和漏极之间的连接的第四晶体管 晶体管。 第一和第二晶体管串联在发光元件和第一电源线之间，第一晶体管的栅极连接到第二电源线。

公开(公告)号：US09093402B2

公开(公告)日：2015-07-28

申请号：US13099804

申请日：2011-05-03

申请人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC分类号： H01L51/00 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/0011 ,  H01L51/5052 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/56 ,  H01L2251/5315

摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。