发明授权
- 专利标题： Chemical vapor deposition flow inlet elements and methods
- 专利标题（中）： 化学气相沉积流入口元素及方法
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申请号： US13606130申请日： 2012-09-07
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公开(公告)号： US08636847B2公开(公告)日： 2014-01-28
- 发明人: Mikhail Belousov , Bojan Mitrovic , Keng Moy
- 申请人： Mikhail Belousov , Bojan Mitrovic , Keng Moy
- 申请人地址： US NY Plainview
- 专利权人： Veeco Instruments Inc.
- 当前专利权人： Veeco Instruments Inc.
- 当前专利权人地址： US NY Plainview
- 代理机构： Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C16/455
摘要：
A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.
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