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公开(公告)号：US20240102150A1
公开(公告)日：2024-03-28
申请号：US18467549
申请日：2023-09-14
发明人： Rutvik J. MEHTA , Yuejing WANG , Robert CALDWELL , Frank CERIO
CPC分类号： C23C14/221 , C23C14/14
摘要： Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 μ·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 μΩ-cm for films of 50 nm and thicker, less than 9.5 μΩ-cm for films of 35 nm and thicker, less than 11 μΩ-cm for films of 20 nm and thicker, less than 15 μΩ-cm for films of 10 nm and thicker or less than 20 μΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.
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公开(公告)号：US20220243325A1
公开(公告)日：2022-08-04
申请号：US17717679
申请日：2022-04-11
发明人： Sandeep Krishnan , Alexander I. Gurary , Yuliy Rashkovsky , Robert Scott Maxwell IV , Aniruddha Bagchi
IPC分类号： C23C16/458 , H01L21/673 , H01L21/687
摘要： A self-centering split substrate carrier that supports a semiconductor substrate in a CVD system includes a first section configured to be centrally located in the split substrate carrier having a top surface with a recessed area for receiving a substrate for CVD processing and comprising a plurality of apertures positioned in an outer surface. A second section formed in a ring-shape having an inner surface configured to receive the first section and an outer surface configured to interface with an edge drive rotation mechanism that rotates the substrate carrier. The inner surface comprising a plurality of boss structures, wherein a respective one of the plurality of boss structures on the inner surface of the second section is configured to fit into a respective one of the plurality of apertures positioned in the outer surface of the first section, so as to improve alignment of the first and the second section of the self-centering split substrate carrier.
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公开(公告)号：US11004755B2
公开(公告)日：2021-05-11
申请号：US16447723
申请日：2019-06-20
发明人： John Taddei , David A. Goldberg , Elena Lawrence , Ian Cochran , Christopher Orlando , James Swallow
IPC分类号： H01L21/66 , H01L21/3213 , H01L21/67 , H01L23/00
摘要： A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.
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公开(公告)号：US10707099B2
公开(公告)日：2020-07-07
申请号：US15496755
申请日：2017-04-25
IPC分类号： H01L21/67 , B01D46/00 , B08B3/14 , B08B15/02 , H01L21/687
摘要： The wafer processing system includes a rotatable wafer support member for supporting a wafer and a plurality of collections trays disposed about a peripheral edge of the wafer support member. The collection trays are arranged in a stacked configuration, each collection tray having an inner wall portion and an outer wall portion that converge to define a trough section for collecting fluid. The system includes a chamber exhaust outlet that is formed in the housing for venting gas from the interior of the housing outside of the collection trays and a chemical exhaust outlet that is formed in the housing for venting gas that flows through the collection chamber to the chemical exhaust outlet. The chemical exhaust outlet is fluidly isolated from the chamber exhaust outlet.
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公开(公告)号：US10571430B2
公开(公告)日：2020-02-25
申请号：US15455678
申请日：2017-03-10
IPC分类号： G01N29/024 , G01N29/44
摘要： A chemical vapor deposition or atomic layer deposition system includes a gas concentration sensor for determining the quantity of precursor gases admitted thereto. The gas concentration sensor can include a transmitter and a receiver for transmitting an acoustic signal across a chamber. In embodiments, the transmitter and receiver are designed to increase transmitted signal while reducing transmitted noise, facilitating use of the gas concentration sensor at low pressure and high temperature.
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公开(公告)号：USD860146S1
公开(公告)日：2019-09-17
申请号：US29627938
申请日：2017-11-30
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公开(公告)号：USD854506S1
公开(公告)日：2019-07-23
申请号：US29641933
申请日：2018-03-26
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公开(公告)号：US10269595B2
公开(公告)日：2019-04-23
申请号：US15290237
申请日：2016-10-11
摘要： A seal having a cross-sectional profile that includes a first lobe, a second lobe, and a corner having an angle between 45 and 90 degrees, inclusive, a first side extending from the first lobe to the corner and a second side extending from the second lobe to the corner, where the first side and the second side define the corner angle. The seal can be seated in a groove so that the first lobe and the corner are in the groove and the second lobe extends from the groove. In use, the second lobe folds into the groove to form a fluid-tight seal.
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公开(公告)号：US10262883B2
公开(公告)日：2019-04-16
申请号：US14991962
申请日：2016-01-10
发明人： Joshua Mangum , William E. Quinn
IPC分类号： H01L21/687 , H01L21/673 , H01L21/66 , H01L21/02 , C23C16/44
摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.
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公开(公告)号：US10167554B2
公开(公告)日：2019-01-01
申请号：US13333152
申请日：2011-12-21
申请人： Bojan Mitrovic , Guanghua Wei , Eric A. Armour , Ajit Paranjpe
发明人： Bojan Mitrovic , Guanghua Wei , Eric A. Armour , Ajit Paranjpe
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C30B25/16 , C30B29/06 , H01L21/02 , H01L21/687
摘要： Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.
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