Invention Grant
- Patent Title: Semiconductor laser
- Patent Title (中): 半导体激光器
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Application No.: US12661067Application Date: 2010-03-10
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Publication No.: US08638829B2Publication Date: 2014-01-28
- Inventor: Osamu Maeda , Takehiro Taniguchi , Takahiro Arakida
- Applicant: Osamu Maeda , Takehiro Taniguchi , Takahiro Arakida
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: JPP2009-070228 20090323; JPP2009-089306 20090401
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/343
Abstract:
A semiconductor laser includes a columnar lamination structure including a first multi-layer reflection mirror, a first spacer layer, an AlxGayIn1-x-yP (where 0≦x
Public/Granted literature
- US20100238965A1 Semiconductor laser Public/Granted day:2010-09-23
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