Invention Grant
- Patent Title: Method for manufacturing a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13495586Application Date: 2012-06-13
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Publication No.: US08642472B2Publication Date: 2014-02-04
- Inventor: Akira Furuya
- Applicant: Akira Furuya
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-231131 20091005
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed.
Public/Granted literature
- US20120264288A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2012-10-18
Information query
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