发明授权
- 专利标题： Thin film forming method, thin film forming apparatus, and program
- 专利标题（中）： 薄膜形成方法，薄膜形成装置和程序
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申请号： US13337743申请日： 2011-12-27
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公开(公告)号： US08642486B2公开(公告)日： 2014-02-04
- 发明人: Toshiyuki Ikeuchi , Pao-Hwa Chou , Kazuya Yamamoto , Kentarou Sera
- 申请人： Toshiyuki Ikeuchi , Pao-Hwa Chou , Kazuya Yamamoto , Kentarou Sera
- 申请人地址： JP
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP
- 代理机构： Cantor Colburn LLP
- 优先权： JP2010-293816 20101228
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater 16, and then makes semiconductor wafers received in the reaction pipe. Next, the control unit heats the reaction pipe in which the semiconductor wafers are received to a film formation temperature by controlling the temperature-raising heater, and then forms thin films on the semiconductor wafers by supplying a film forming gas into the reaction pipe from a process gas introducing pipe. Also, the control unit sets the load temperature to a temperature higher than the film formation temperature.