发明授权
- 专利标题： Amidate precursors for depositing metal containing films
- 专利标题（中）： 用于沉积含金属膜的酰胺化前体
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申请号： US13030227申请日： 2011-02-18
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公开(公告)号： US08642797B2公开(公告)日： 2014-02-04
- 发明人: Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III , Xinjian Lei , Daniel P. Spence
- 申请人： Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III , Xinjian Lei , Daniel P. Spence
- 申请人地址： US PA Allentown
- 专利权人： Air Products and Chemicals, Inc.
- 当前专利权人： Air Products and Chemicals, Inc.
- 当前专利权人地址： US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian
- 主分类号： C07F7/00
- IPC分类号： C07F7/00 ; C07F11/00 ; C07F15/00 ; C23C16/00
摘要：
Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” refers to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.
公开/授权文献
- US20120045589A1 Amidate Precursors For Depositing Metal Containing Films 公开/授权日：2012-02-23