发明授权
- 专利标题： Buffered finFET device
- 专利标题（中）： 缓冲finFET器件
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申请号： US13214102申请日： 2011-08-19
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公开(公告)号： US08643108B2公开(公告)日： 2014-02-04
- 发明人: Irfan Rahim , Jeffrey T. Watt , Yanzhong Xu , Lin-Shih Liu
- 申请人： Irfan Rahim , Jeffrey T. Watt , Yanzhong Xu , Lin-Shih Liu
- 申请人地址： US CA San Jose
- 专利权人： Altera Corporation
- 当前专利权人： Altera Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Okamoto & Benedicto LLP
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/336
摘要：
One embodiment relates to a buffered transistor device. The device includes a buffered vertical fin-shaped structure formed in a semiconductor substrate. The vertical fin-shaped structure includes at least an upper semiconductor layer, a buffer region, and at least part of a well region. The buffer region has a first doping polarity, and the well region has a second doping polarity which is opposite to the first doping polarity. At least one p-n junction that at least partially covers a horizontal cross section of the vertical fin-shaped structure is formed between the buffer and well regions. Other embodiments, aspects, and features are also disclosed.
公开/授权文献
- US20130043536A1 BUFFERED FINFET DEVICE 公开/授权日：2013-02-21
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