Invention Grant
- Patent Title: Triode reactor design with multiple radiofrequency powers
- Patent Title (中): 具有多个射频功率的三极管反应器设计
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Application No.: US13301725Application Date: 2011-11-21
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Publication No.: US08652298B2Publication Date: 2014-02-18
- Inventor: Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
- Applicant: Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: C23F1/00
- IPC: C23F1/00

Abstract:
Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
Public/Granted literature
- US20130126475A1 TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS Public/Granted day:2013-05-23
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