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    Triode reactor design with multiple radiofrequency powers
    1.
    发明授权
    Triode reactor design with multiple radiofrequency powers 有权
    具有多个射频功率的三极管反应器设计

    公开(公告)号：US08652298B2

    公开(公告)日：2014-02-18

    申请号：US13301725

    申请日：2011-11-21

    申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32091 ,  H01J37/32165

    摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

    摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

    TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS
    2.
    发明申请
    TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS 有权
    三重反应器设计与多种无线电功能

    公开(公告)号：US20130126475A1

    公开(公告)日：2013-05-23

    申请号：US13301725

    申请日：2011-11-21

    申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    IPC分类号： C23F1/00 ,  H05H1/24 ,  C23F1/08

    CPC分类号： H01J37/32091 ,  H01J37/32165

    摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

    摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

    SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL
    6.
    发明申请
    SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
    用于等离子体电压控制的系统，方法和装置

    公开(公告)号：US20130122711A1

    公开(公告)日：2013-05-16

    申请号：US13294053

    申请日：2011-11-10

    申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    IPC分类号： H01L21/3065 ,  C23F1/08

    CPC分类号： H01J37/32091 ,  H01J37/32165 ,  H01J37/32174

    摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.

    摘要翻译： 用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极 。 相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。 控制器耦合到等离子体室，每个RF源和锁相电路。 该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

    Negative Ion Control for Dielectric Etch
    7.
    发明申请
    Negative Ion Control for Dielectric Etch 有权
    介质蚀刻负离子控制

    公开(公告)号：US20130023064A1

    公开(公告)日：2013-01-24

    申请号：US13188421

    申请日：2011-07-21

    申请人： Alexei Marakhtanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    发明人： Alexei Marakhtanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    IPC分类号： H01L21/66 ,  H01L21/3065

    CPC分类号： H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

    摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

    摘要翻译： 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加 到晶片表面的负离子通量。

    Pulsed Plasma Chamber in Dual Chamber Configuration
    8.
    发明申请
    Pulsed Plasma Chamber in Dual Chamber Configuration 审中-公开
    脉冲等离子室双腔配置

    公开(公告)号：US20130059448A1

    公开(公告)日：2013-03-07

    申请号：US13227404

    申请日：2011-09-07

    申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    IPC分类号： H01L21/3065 ,  H01L21/306 ,  C23F1/08

    摘要： Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.

    摘要翻译： 提供了用于在脉冲等离子体室中处理衬底的实施例。 具有两个腔室的处理装置，由流体连接腔室的板分开，包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频（RF）电源的电压和频率。 脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。 系统控制器可操作以设定参数以调节室之间的物质流动，以辅助负离子蚀刻，以在关闭期间中止余辉期间晶片表面上的过多正电荷，并且辅助重击 在ON期间的底部等离子体。

    RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR
    9.
    发明申请
    RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR 审中-公开
    等离子体处理系统中的RF接地回路及其方法

    公开(公告)号：US20140060739A1

    公开(公告)日：2014-03-06

    申请号：US13662331

    申请日：2012-10-26

    申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Michael C. Kellogg ,  Andy Desepte ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Michael C. Kellogg ,  Andy Desepte ,  Andrew D. Bailey, III

    IPC分类号： H01J37/04

    CPC分类号： H01J37/04 ,  H01J37/32091 ,  H01J37/32174

    摘要： Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading.

    摘要翻译： 公开了以至少两种模式操作等离子体处理工具的等离子体处理室的方法和装置。 在第一模式中，基板支承组件可在间隙可调节范围内移动，以调节电极之间的间隙以适应不同的加工要求。 在该第一模式中，只要间隙距离在间隙可调整范围内，RF接地返回路径连续性被维持而与间隙距离无关。 在第二模式中，基板支承组件能够移动以进一步打开间隙以适应无阻碍的基板装载/卸载。

    Negative ion control for dielectric etch
    10.
    发明授权
    Negative ion control for dielectric etch 有权
    负离子控制电介质蚀刻

    公开(公告)号：US09117767B2

    公开(公告)日：2015-08-25

    申请号：US13188421

    申请日：2011-07-21

    申请人： Alexei Marakhatanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    发明人： Alexei Marakhatanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    IPC分类号： H01L21/3065 ,  H01J37/02 ,  H01J37/32 ,  C23C14/34 ,  C23C16/505 ,  H01L21/311 ,  H01L21/67 ,  H05H1/46

    CPC分类号： H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

    摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

    摘要翻译： 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加 到晶片表面的负离子通量。